Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

ABSTRACT

A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 12/732,939filed on Mar. 26, 2010, which is a division of U.S. application Ser. No.10/874,392, filed on Jun. 24, 2004 which is based upon and claims thebenefit of priority from the prior Japanese Priority Patent ApplicationNo. 2003-187331 filed on Jun. 30, 2003, and Japanese Priority PatentApplication No. 2003-298337 filed on Aug. 22, 2003, the entire contentsof which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a deposition method and a depositionapparatus of fine particles such as nano-particles having diameters lessthan about 30 to 90 nm, and a forming method and a forming apparatus ofcarbon nanotubes by using the fine particles as catalysts.

Furthermore, the present invention relates to semiconductor deviceshaving a channel or wires for which carbon nanotubes are used andmanufacturing methods of the same, and more particularly, to asemiconductor device having a carbon nanotube which has goodcontrollability of sizes and a manufacturing method of the same.

2. Description of the Related Art

Attempts have been made to manufacture a thin film or a semiconductordevice by piling fine particles, particularly nano-particles, on asubstrate, which has a different property from a conventional thin filmor device. For example, attempts have been made to deposit siliconparticles on a gate insulating film of a MOS transistor so that afloating gate has a low leakage. Several methods for depositing theseparticles exists. For example, there is a method whereby gas (aerosol)including particles (aerosol) is sprayed so that the particles aredeposited on the substrate by diffusion or inertia. There also is amethod whereby particles are deposited in a temperature gradient bythermophoresis. There also is a method whereby particles are charged inadvance and then deposited by using an electrical field, or the like.

Nano-particles can be used as catalysts for formation of carbonnanotubes, which are self-organizing materials. Lately, attempts arebeing made to apply the carbon nanotubes to various fields because ofgood electrical, thermal and mechanical properties. Sincecharacteristics of the carbon nanotubes vary in terms of theirdiameters, chiralities, the number of layers, or the like, it isimportant to control these characteristics for various applications.

Recent reports indicate that the diameters of the carbon nanotubes arecontrolled by the size of catalyst particles. In particular, particlesare generated by a liquid phase process such as a reversed micellemethod. This is followed by particle suspension whereby particles aredropped and dried on the substrate, and then CVD. As a result, carbonnanotubes can be grown on the substrate while controlling theirdiameters. Reports also indicate that carbon nanotubes can be grownafter an aqueous solution of ferritins containing iron oxide is providedon a substrate.

The carbon nanotube has a cylinder-shaped configuration wherein asurface piece (graphene sheet) of graphite is wound. The diameter of thecarbon nanotube is in a range of approximately 3 to 9 nm to 30 to 90 nmand the length of the carbon nanotube is approximately 3 to 9 μm. Hence,the aspect ratio (length/diameter) is approximately 1000. Therefore, aone-dimensional electronic characteristic due to such configurationanisotrophy is observed.

An example of an electronics application of the carbon nanotube thewiring of an LSI (large scale integrated circuit). The maximum electriccurrent density of the carbon nanotube where an electric current canflow without causing snapping (breaking) is one billion amperes per onesquare centimeter, which is more than 1000 times as much as copperwiring. In addition, the thermal conductivity is ten times as high ascopper.

With respect to the carbon nanotube, ballistic electron transport can berealized without scattering phenomena caused by impurities and latticevibration. In this case, it is known that the resistance per one carbonnanotube is approximately 6.45 kΩ. Furthermore, the diameter of thecarbon nanotube has a wide range of approximately 0.4 nm to 100 nm. Thediameter is formed in a self-organized manner, and therefore changes indiameter in a longitudinal direction are extremely small. Because of theabove discussed characteristics, the electromigration due to a highelectric current density in a case where the carbon nanotube is appliedas wiring of the LSI is small. Therefore, it is expected that extremelyminute metal wirings having high reliability can be realized.

Another example of an electronics application of the carbon nanotube isto the channel of a transistor. It is expected that, with the carbonnanotube, abilities in driving electric current will be considerablyimproved because of the ballistic electron transport and an extremelylarge electric current density the carbon nanotube can sustain.

As briefly mentioned above, general growth methods of carbon nanotubes,such as the arc discharging method, the laser ablation method (laserevaporation method), the CVD method, the SiC sublimation method, or thelike, are known. In such methods, at the time when the carbon nanotubeis formed, transition metals are used as catalyst metals. In the CVDmethod or SiC sublimation method, the transition metal is positioned andformed in advance by using lithography and a vacuum evaporation methodused for a semiconductor LSI, so that the carbon nanotubes areselectively grown by performing position controlling.

However, the above mentioned conventional methods have the followingproblems.

First, although the above mentioned art is useful for piling theparticles on the plane substrate, it is difficult to deposit theparticles on the bottom part of the groove having a high aspect ratio,which is formed on the substrate with a size on the order of a micron orless. More particularly, as shown in FIG. 1, due to diffusion of theparticles 301, the particles 301 are unevenly distributed and depositedat an entering part of a groove forming part 302. Because of this, it isdifficult to lead the particles 301 to a bottom part 303. This tendencyfrequently occurs when making the sizes of the particles smaller. Forexample, this causes a big problem when the catalyst particles aredeposited on the bottom part of the via hole in a case where the carbonnanotubes are applied as a via wiring of the semiconductor.

Furthermore, in the above discussed methods for forming carbonnanotubes, the formation of the particles or preparation of a suspensionis generally performed outside of a CVD chamber by manual means. Hence,various impurities may get easily mixed in. Furthermore, it is necessaryto add a surface active agent in order to keep particles generated inthe liquid phase in a stable suspension. In many examples, therefore,impurities are substantially included when the particles are provided onthe substrate. In addition, it is difficult to avoid exposing a surfaceof the particles to the air and such impurities. Hence, it is difficultto generate particles having stable compositions.

The above mentioned impurities on the substrate and unstableness of thecomposition of the particles may cause problems in growing carbonnanotubes and controlling their diameters. In addition, since the abovementioned process is a process substantially and easily exposed to theair, the surface of the substrate is easily oxidized and electriccontact between the carbon nanotube after the growth and the substratebecomes worse. Hence, it is difficult to apply the carbon nanotube toelectric applications.

Thus, it is difficult to apply a conventional forming technology of thenano-particles to a process requiring a precise control of the carbonnanotube growth. In addition, there are still a lot of problems incontrolling the growth of the carbon nanotubes.

There also is a method in the related art wherein carbon nanotubes areused for connecting wiring layers of an LSI having a multilayerinterconnection structure. FIG. 2-(A) shows a multilayer interconnectionstructure wherein an upper wiring layer 103 is provided over a lowerwiring layer 101 via an interlayer insulating layer 102. Carbonnanotubes 105 are formed in a via hole forming part 104 so that theupper wiring layer 103 and the lower wiring layer 101 are electricallyconnected. Under the above mentioned structure, a catalyst metal layer106 is formed on a surface of the lower wiring layer 101 of the via holeforming part 104. Carbon nanotubes are formed by using the catalystmetal layer 106 as a nucleus with a thermal CVD method.

However, the LSI has a tendency to become more and more integrated basedon the scaling rule, and therefore it is expected that the opening widthof a via hole forming part will continue to get narrower and the aspectratio of the via hole forming part will continue to get larger. Even ifit is attempted to form the catalyst metal layer 106 on the bottom ofthe narrower via hole forming part 104 by the spattering method or vapordeposition method, the catalyst metal layer 106 is adhered on not onlythe bottom of the via hole forming part 104 but also a side wall, asshown in FIG. 2-(B). As a result of this, a carbon nanotube is grownfrom the catalyst metal layer 106A adhered on the side wall. This causesa problem in that the upper wiring layer 103 and the lower wiring layer101 are not electrically connected. On the other hand, there is anelectric plating method whereby the catalyst metal layer is formed.However, in this method, as shown in FIG. 2-(C), as the opening part ofthe via hole forming part 104 is narrower, a film width distributionbased on an electric current density distribution caused by addedvoltage is more remarkable. Therefore, the film of a bottom center part104A of the via hole forming part 104 becomes thin and a film of avicinity part 104B becomes thick. This causes an increase in the viaresistance of the catalyst metal layer 106B to thickly adhere thecatalyst metal to the vicinity part 104B.

Furthermore, the catalyst metal layer formed by the spattering method,vacuum vapor deposition, or electric plating method, is a continuouslayer having a small surface roughness. A bundle of the carbon nanotubesgrown from such a catalyst metal layer has unevenness of internaldiameters and external diameters. As the via hole forming part isnarrowed and the number of the carbon nanotubes contributing to electricconductivity is reduced, unevenness of the via resistance becomeslarger. As a result, a problem such as wiring delay may occur in a casewhere the via forming part has a large via resistance. Furthermore, in acase of the LSI having a lot of transistors wherein carbon nanotubes areused as a channel, unevenness of an electric current driving abilitybetween the transistors occurs due to the unevenness of the internal andexternal diameters of the carbon nanotubes. This causes a problem inthat the capabilities of the entire LSI are reduced.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea novel and useful deposition method and deposition apparatus of fineparticles, and forming method and forming apparatus of carbon nanotubes,in which one or more of the problems described above are eliminated.

Another and more specific object of the present invention is to providea deposition method and deposition apparatus whereby particles can bedeposited substantially on only a bottom part of a groove structurehaving a high aspect ratio, for example, only a bottom part of a viahole of a semiconductor wire, as well as a plane part.

Furthermore, it is also an object of the present invention to provide aforming method and forming apparatus of a carbon nanotube whereby acarbon nanotube is grown in the groove structure with precisecontrollability by using the deposited particles as catalysts.

In addition, it is also an object of the present invention to provide aforming method and forming apparatus of a carbon nanotube whereby acarbon nanotube is grown under a clean condition where a depositioncondition of the particle and a surface condition of a substrate arecontrolled, so that it is possible to easily perform control of thegrowth of the carbon nanotube and its electrical application.

The above objects of the present invention are achieved by a depositionmethod of fine particles, including the steps of:

irradiating a fine particle beam formed by size-classified fineparticles to an irradiated subject under a vacuum state, and

depositing the fine particles on a bottom part of a groove structureformed at the irradiated subject.

The above objects of the present invention are achieved by a depositionmethod of fine particles, including the steps of:

generating the fine particles,

size-classifying the fine particles to a desired fine diameter, and

irradiating a fine particle beam formed by the size-classified fineparticles to a irradiated subject under a vacuum state.

The above objects of the present invention are achieved by a depositionapparatus of fine particles, including:

a generating part configured to generate fine particles,

a classifying part configured to size-classify the fine particles to adesired fine diameter, and

an irradiating part configured to irradiate a fine particle beam formedby the fine particles having desired particle diameters to an irradiatedsubject under a vacuum state.

The above objects of the present invention are achieved by a formingmethod of carbon nanotubes, comprising the steps of:

irradiating a fine particle beam formed by size-classified catalyst fineparticles to an irradiated subject under a vacuum state,

depositing the fine particles on a bottom part of a groove structureformed at the irradiated subject, and

generating a carbon nanotube from the bottom part by using the catalystfine particles as catalysts.

The above objects of the present invention are achieved by a formingmethod of carbon nanotubes, including the steps of:

generating catalyst fine particles,

size-classifying the catalyst fine particles to desired fine diameters,

irradiating a fine particle beam formed by the size-classified catalystfine particles to an irradiated subject under a vacuum state, so thatthe catalyst fine particles are deposited on a bottom part of a groovestructure formed at the irradiated subject, and

generating a carbon nanotube from the bottom part by using one of thecatalyst fine particles as a catalyst.

The above objects of the present invention are achieved by a formingmethod of carbon nanotubes, comprising the steps of:

generating catalyst fine particles,

depositing the catalyst fine particles on a substrate, and

generating the carbon nanotube by using one of the catalyst fineparticles as a catalyst,

wherein each step is continuously performed under a designatedenvironment cut off from the outside.

The above objects of the present invention are achieved by a formingapparatus of carbon nanotubes, including:

a fine particle generation part configured to generate fine particles,

a deposition part configured to deposit the catalyst fine particles on asubstrate, and

a tube generation part configured to generate a carbon nanotube by usingone of the catalyst fine particles as a catalyst,

wherein a series of processes from generation of the catalyst fineparticles to generation of the carbon nanotubes is continuouslyperformed under a designated environment cut off from the outside.

It is also a general object of the present invention to provide a noveland useful semiconductor device and manufacturing method of the same, inwhich one or more of the problems described above are eliminated.

Another and more specific object of the present invention is to providea highly reliable semiconductor device whereby the resistance of aperpendicular wiring part, such as a contact or via having a high aspectratio, and unevenness of the resistance can be reduced, andmanufacturing the same. It is also an object of the present invention toprovide a highly reliable semiconductor device whereby it is possible tomake the size of the semiconductor device small, reduce unevenness of aproperty of the semiconductor device, provide high performance by thesemiconductor device, and manufacturing of the same.

The above objects of the present invention are achieved by asemiconductor device, including:

a first conductive part;

an interlayer insulating layer which covers the first conductive part;

a second conductive part which is formed on the interlayer insulatinglayer;

a groove part which pierces the inter layer insulating layer and exposesthe first conductive layer;

wherein the groove part includes a catalyst layer and a carbon nanotube,

the catalyst layer is formed on a surface of the first conductive part,and

the carbon nanotube is formed on the catalyst layer and electricallyconnects the first conductive layer and the second conductive layer; and

the catalyst layer is formed by fine particles.

According to the above mentioned invention, the carbon nanotube isprovided at the groove part for connecting the first conductive part andthe second conductive part. The carbon nanotube is formed by being grownfrom the catalyst layer formed by a fine particle formed at a surface ofthe first conductive part. Hence, corresponding to a configuration anddistribution of the fine particles, it is possible to control theinternal diameter, the external diameter, or the density of adistribution in the horizontal direction of the carbon nanotubes.Compared to a catalyst layer formed by a conventional consecutive film,it is possible to improve controllability of a measurement ordistribution of the carbon nanotubes by providing the fine particlesthat become a growth core of the carbon nanotubes. Hence, it is possibleto realize a highly reliable semiconductor device whereby the resistanceof a perpendicular wiring part such as a contact or via having a highaspect ratio can be reduced.

The above object of the present invention is achieved by a semiconductordevice, including:

a substrate;

an insulating layer formed on a main surface of the substrate;

two catalyst layers formed on the insulating layer isolated from eachother;

a carbon nanotube formed between the two catalyst layers;

a first conductive part and a second conductive part each of whichcovers a separate one of the catalyst layers; and

a third conductive part formed on a back surface of the substrate,

wherein an electric current flowing in the carbon nanotube is controlledby an electric voltage and an electric current applied to the thirdconductive part, and

each of the catalyst layers is formed by a fine particles.

According to the above mentioned invention, corresponding to an electricfield applied from the third conductive part via the insulating layer,electric conductivity of the carbon nanotube for connecting the firstconductive part and the second conductive part is changed, so as tofunction as a transistor. In addition, the carbon nanotube is formed bybeing grown from the catalyst layer formed by a fine particle. Hence,corresponding to a configuration and distribution of the fine particles,it is possible to control the diameter or the density of a distributionin the horizontal direction of the carbon nanotubes. Therefore, it ispossible to reduce unevenness of a property of the transistor, andtherefore it is possible to realize a highly reliable semiconductordevice having a high ability and a lot of transistors such as an LSI.

The above object of the present invention is achieved by a manufacturingmethod of a semiconductor device, the semiconductor device including afirst conductive part and a second conductive part which are providedseparated from each other, the method comprising the steps of:

forming a catalyst layer, which is formed by fine particles, on at leastone of the first conductive part and the second conductive part;

forming a carbon nanotube which electrically connects the firstconductive part and the second conductive part by using one of the fineparticles as a catalyst.

According to the above mentioned invention, the carbon nanotube isprovided as the wiring for connecting the first conductive part and thesecond conductive part. The catalyst layer formed by a fine particle isformed in advance between the first conductive part and the secondconductive part. The carbon nanotube is formed by being grown from thefine particle. Hence, corresponding to a configuration and distributionof the fine particles, it is possible to control the internal diameter,the external diameter, or the density of a distribution of the carbonnanotubes. As a result of this, it is possible to provide a highlyreliable semiconductor device whereby it is possible to reduceunevenness of properties of a horizontal wiring part and an activeelement.

In the step of forming the catalyst layer, the catalyst layer may beformed by an electroless plating process.

In an electroless plating method, it is possible to selectively form thecatalyst layer on a surface of the insulating layer or a bottom part ofthe via hole, and therefore the catalyst layer can be made by anaggregate of the fine particle.

Other objects, features, and advantages of the present invention willbecome more apparent from the following detailed description when readin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view showing a state of therelated art where particles are deposited on a groove structure having ahigh aspect ratio;

FIG. 2 is a view showing problems of a related art wire structure;

FIG. 3 is a schematic cross-sectional view showing a state of a firstembodiment where particles are deposited on a bottom part of a groovestructure having a high aspect ratio;

FIG. 4 is a schematic view showing a schematic structure of a particledeposition apparatus of the first embodiment of the present invention;

FIG. 5 is a schematic view showing a schematic structure of a formingapparatus of a carbon nanotube of the first embodiment of the presentinvention;

FIG. 6 is a schematic view showing a schematic structure of a depositionchamber of the first embodiment of the present invention;

FIG. 7 is a schematic view showing a schematic structure of a particledeposition apparatus of a first example of the first embodiment of thepresent invention;

FIG. 8 is a schematic view showing a schematic structure of a DMA(Differential Mobility Analyzer) of the first example of the firstembodiment of the present invention;

FIG. 9 is a flow chart showing a process for forming a carbon nanotubeof the first example of the first embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view showing a state of the firstexample of the first embodiment where the carbon nanotube is formed in avia hole of a substrate;

FIG. 11 is a schematic view showing a fine particle beam irradiationpart of a particle deposition apparatus of a second example of the firstembodiment;

FIG. 12 is a schematic view showing a schematic structure of a formingapparatus of a carbon nanotube of a third example of the firstembodiment of the present invention;

FIG. 13 is a cross-sectional view of the main point of a semiconductordevice of a second embodiment of the present invention;

FIG. 14 is a plan view and a schematic view of a fine particle statecatalyst layer of the second embodiment of the present invention;

FIG. 15 is a first view of a manufacturing process of the semiconductordevice of the second embodiment of the present invention;

FIG. 16 is a second view of a manufacturing process of the semiconductordevice of the second embodiment of the present invention;

FIG. 17 is an SEM (Scanning Electron Microscope) picture of a carbonnanotube used for the semiconductor device of the second embodiment;

FIG. 18 is a view for explaining the SEM picture shown in FIG. 17:

FIG. 19 is a cross-sectional view of the main point of a semiconductordevice of a third embodiment of the present invention;

FIG. 20 is a first view of a manufacturing process of the semiconductordevice of the third embodiment of the present invention; and

FIG. 21 is a second view of a manufacturing process of the semiconductordevice of the third embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will now be given, with reference to FIG. 3 through FIG.21, of embodiments of the present invention.

First Embodiment

In order to deposit particles substantially on the bottom part in agroove structure having a high aspect ratio, such as the structure shownin FIG. 3, particles 1 having the same moving direction may be led to abottom part 3 of a groove structure 2 having a high aspect ratio. Inthis case, it is necessary to form a particle beam wherein directions ofparticles are arranged in advance so as to have high directivities; andminimize disturbance, namely diffusion, of the particle direction due toa collision of gas molecules.

The groove structure having a high aspect ratio is assumed with adepth/width that is more than 1/1; that is, the depth is larger than thewidth, and the width is less than approximately 2 μm calculated underassumption that a particle size is approximately 20 nm.

More specifically, a deposition apparatus such as shown in FIG. 4 may beused. The deposition apparatus 4 includes a particle generation part 11,a particle charging part 12 for charging the generated particles, aparticle classification part 13 for classifying the particles todesignated sizes, and a deposition chamber 14 where a particle beam isirradiated and particles are deposited.

The deposition chamber 14 includes a vacuum part 15, a nozzle 16, a highvacuum part 17, a particle convergence part 18, a movable stage 19, andother components. The nozzle 16 leads the particles to the vacuum part15. The vacuum part 15 has a pressure of approximately 10 Pa, forexample. The high vacuum part 17 has a pressure of approximately 10⁻⁴Pa, for example. The direction of the particle beam is arranged by theparticle convergence part 18. A substrate 10 which is the subject ofirradiation is provided on the movable stage 19.

The particles are generated by the particle generation part 11 based onlaser ablation, an evaporation-condensation method, or the like, andthen led to the particle charging part 12 by carrier gas such as helium.The particles are charged by the particle charging part 12 based on amethod using radiation rays, a method using ultraviolet rays, or thelike. The sizes of the charged particles are arranged and classified bythe particle classification part 13 such as a DMA (Differential MobilityAnalyzer) if necessary, and then the particles are led to the depositionchamber 14 with carrier gas.

The carrier gas containing the particles is led to the depositionchamber 14 via the nozzle 16. The nozzle 16 has a pore (orifice) or acapillary. The particles led to the vacuum part 15 are led to the highvacuum part 17 by a differential vacuum pump 15 a having one stage ormulti-stages. At this time, only the carrier gas is led to thedifferential vacuum pump 15 a due to the inertia of the particles. Theparticles led to the high vacuum part 17 have relatively widedistribution in position due to an influence of the carrier gas. Theparticles are led to an electrostatic lens 18 a of the particleconvergence part 18 so as to be included in a particle beam wherein thedirections of the particles are arranged by a convergence effect of theelectrostatic lens 18 a.

In the electrostatic lens 18 a shown in FIG. 4, three circular plateshaving holes are arranged in series. Different electric potentials areprovided to the respective circular plates. By selecting suitableelectric potentials, it is possible to converge the charged particles.It is also possible to increase or decrease the number of the circularplates having holes based on conditions. If necessary, it is possible toincrease or decrease the speed of the particles by using these lenses.In addition to using the above mentioned electrostatic lens to convergeparticles, it is also possible to use an aerodynamic lens.

A particle beam having high directivity wherein the directions of theparticles are arranged is irradiated to the substrate 10. The substrate10 has a groove structure having a high aspect ratio, and is fixed onthe movable stage 19. Since the particle beam is provided in a highvacuum state, there is little disturbance due to gas molecules. Forexample, assuming that the pressure is approximately 10⁻⁴ Pa, helium gasis used as the carrier gas, and the particles have diameters ofapproximately 5 nm, the particles have mean free paths of approximately36 cm. That is, if the flight distance of the particle is set so as tobe less than the above mentioned mean free path, it is possible toignore the disturbance due to the gas molecules. As a result of this,the particles can maintain directions provided by the particleconvergence part 18 so as to be deposited on substantially a bottom partof the groove structure having the high aspect ratio.

The particle beam leading to the bottom part of the groove structure hasan extremely high speed such as 1000 m/s in a normal state due toacceleration by the vacuum part 15 or the electrostatic lens 18 a. Theparticle beam may recoil from the bottom part. The substrate temperaturemay be decreased in order to effectively ease such recoil. For thisreason, a temperature adjustment mechanism may be provided at themovable stage 19.

Meanwhile, in order to form carbon nanotubes in a state where theparticles and surface state of the substrate are controlled, particlesas catalysts are generated under a vacuum state or an inactive gasenvironment and the particles are deposited on the substrate under asimilar environment to that without using a solvent, so that the carbonnanotubes are grown. That is, it is preferable that a series of steps ofgenerating the particles, depositing the particles on the substrate, andgrowing the carbon nanotubes be performed continuously under adesignated environment cut off from the outside.

A schematic structure of a forming apparatus of the carbon nanotubewhereby the above described continuous steps are performed is shown inFIG. 5.

This forming apparatus includes a particle generation part 21, aclassification part 22, a particle deposition part (deposition chamber)23, and a tube generation part (CVD chamber) 24. Particles used ascatalysts are generated by the particle generation part 21. Thegenerated particles are classified to designated particle diameters bythe classification part 22. The particles are deposited on the substrateby the particle deposition part (deposition chamber) 23. The carbonnanotubes are generated with the tube generation part (CVD chamber) 24by using the deposited particles as catalysts. Under the above mentionedstructure, a continuous process from generation of the particles togeneration of the carbon nanotubes is performed continuously under adesignated environment cut off from the outside.

For the generation of the carbon nanotubes, first the particles aregenerated by a laser ablation at the generation chamber 31 of theparticle generation part 21. The generation chamber 31 has a lowpressure helium gas environment. As a laser, for example, an Nd:YAGpulse laser 32 having a second harmonic frequency (532 nm, 20 Hz) isused. As a target of the ablation, a catalyst metal, such as nickel,iron, cobalt, or its alloy is selected. The catalyst metal changes tovapor due to the laser irradiation. The vapor is cooled by the heliumgas that is the carrier gas so that the particles are formed. It is alsopossible to generate the particles by using not only the above mentionedlaser ablation but also a generally known evaporation-condensationmethod.

Next, the particles are annealed by an electric furnace 33 and then ledto the charging apparatus 34. The particles are charged positively ornegatively by a corona charging apparatus, for example, of the chargingapparatus 34, and then led to the classification apparatus 22. As thecharging apparatus, an apparatus using a radioactive source orultraviolet rays may be used. The above described charging process maybe performed prior to the annealing process. In the classificationapparatus 22, the particles are classified by a differential mobilityanalyzer (DMA) so that monodispersed particles having diameters of nanoorder (less than approximately 1.2 of a geometric standard deviation)can be obtained. The classification of the particles can be performed byusing not only the above mentioned differential mobility analyzer butalso an impaction device or virtual impaction device, for example.

Then, the particles are led to the deposition chamber 23. Before that, acoating process for the particles may be performed by making theparticles go through a supersaturated vapor of a material. Theclassified or classified and coated, particles are deposited on thesubstrate 20 by the deposition chamber 23. FIG. 6 shows a schematicstructure of the deposition chamber 23. The particles are led to thesubstrate by an electrostatic force, an inertial effect, diffusion, orthe like. Especially, approximately 100% of the particles may bedeposited on the substrate 20 with an electrostatic force by adding abias to the substrate 20. At this time, it is possible to depositparticles on only a desired position by patterning on the substrate 20with a photoresist.

After the deposition of the particles, the substrate 20 is led to theCVD chamber 24 via the vacuum transfer chamber 25. The depositionchamber may be used as the CVD chamber. In the CVD chamber 24, thecarbon nanotubes are generated based on the catalyst particles. As areaction gas, generally, a material containing carbon such as methane,acetylene, or alcohol, may be used. However, as long as the catalystparticles contain carbon in advance, another gas may be used.

Thus, in the first embodiment, the process from generation of thecatalyst to generation of the carbon nanotube is continuously performedin a vacuum state or an inactive gas. Hence, it is possible to easilygenerate the catalyst particles and control the surface state and animpurity. In conventional thin film making, a hydrogen treatment isperformed before the CVD so as to eliminate an oxidation layer of thesurface. In the case of the catalyst particles, since the particles havea large surface area and a complicated surface structure, the problem ofwhether such a conventional process is effective provides motivation tomake the present invention.

First Example of First Embodiment

Next, a first example of the first embodiment of a deposition method isexplained. In addition, a deposition apparatus of fine particles, and aforming method and a forming apparatus of carbon nanotubes, areexplained.

More specifically, in the first example, a deposition apparatus andmethod whereby particles are deposited substantially on a bottom part ofa groove structure having a high aspect ratio such as a via hole formingpart of a semiconductor wiring, and a method for growing carbonnanotubes by using the deposited particles as catalysts, are described.

FIG. 7 is a schematic view showing a schematic structure of a particledeposition apparatus of the first example of the first embodiment of thepresent invention. Nickel(Ni), Iron(Fe), Cobalt(Co), or the like issuitable as a catalyst particle. In this example, the Ni particle isused as the catalyst particle.

In this example, the particles are generated by using laser ablation. ANi substrate 400 is provided in a particle generation chamber 401 havinga pressure of approximately 3×10³ Pa. The Ni substrate 400 is irradiatedby a laser beam from the pulsed laser 402 (a second harmonic Nd:YAGlaser having a repeated frequency 20 Hz, and a wave length of 532 nm) sothat vapor is generated. This vapor is cooled by helium (He) havingapproximately 99.99995% purity and a flow rate of 1 SLPM (standard literper minute) so that Ni particles (nano-particles) are generated bynucleation.

Next, the generated Ni particles are annealed at approximately 800° C.,for example, by a tube-shaped electric furnace 403. And then, the Niparticles are charged by a radioactive source of americium 241 (²⁴¹Am)at a charging apparatus 404 and classified by a DMA (DifferentialMobility Analyzer) 405 so that the sizes of the Ni particles arearranged.

As shown in FIG. 8, the DMA 405 has a double cylinder structure. Avoltage is added to the inside of the DMA 405. The DMA 405 has aninternal pipe having an external radius R1 of 11 mm and an external pipehaving an external radius R2 of 18 mm. Particles led from an upper partslit of the external pipe are pulled to the internal pipe in gas flowingbetween the pipes, depending on an electrical mobility, namely a size.Only a particle having a certain electrical mobility passes through aslit in the lower part of the internal pipe (in this example, thedistance L between the upper and lower slits is 210 nm). A necessaryvoltage against a particle having a diameter of 7 nm is approximately2.7V when a flow rate of the sheath gas is 5 SLPM, and the flow rate ofthe gas containing the particles is 1 SLPM. Other particles are caughtby a filter in the lower part of the DMA.

The Ni particles whose size is arranged by the DMA 405 are led to a lowpressure vacuum room 407 via the orifice (nozzle) 406. The vacuum room407 has approximately 10 Pa and the diameter of the orifice 406 isapproximately 1 mm. A pump is situated at a side part of the vacuum room407 and the vacuum room 407 is connected to an evacuation systemhandling 15,000 liters per minute. Hence, most of the carrier gas isevacuated here (differential pumping). The vacuum room 407 has a lengthof approximately 5 cm in directions which the particles are led. A holeforming part having a diameter of approximately 5 mm is positioned at aside opposite to the leading part. Although the Ni particles led to thevacuum room 407 are spread in space due to the influence of the carriergas, most of the Ni particles are led to a high vacuum room 408 having apressure of approximately 10⁻⁴ Pa via the above mentioned hole formingpart.

An entry part of the high vacuum part 408 has a cylinder-shapedconfiguration having a diameter of approximately 5 cm. An electrostaticlens system 409 is provided at the entry part. In this example, theelectrostatic lens 409 includes circular plates 409 a and 409 b havingholes with a distance of approximately 3 cm between them. The diameterof the hole is approximately 2 cm. A voltage of 100V is added to thecircular plate 409 a and a voltage of 640V is added to the circularplate 409 b. The particle beam that is slightly spread due to theinfluence of the carrier gas is converged by the electrostatic lenssystem 409. The voltage is determined based on a spread angle of theparticle beam. In this example, it is assumed that the particle beam hasa diameter of 5 mm and a spread angle of approximately 5 degrees at theentry part of the electrostatic lens system 409. The spread angledepends on the diameters of the particles and generally obtained byexperiment. The above mentioned electrostatic lens system 409 can beused for convergence of a normal ion beam and electron beam. Since theabove mentioned electrostatic lens system 409 is a convergent methodinsensitive to mass or amount of electrical charge, the electrostaticlens system 409 is effective for the particle beam.

For increase or decrease of the speed of the Ni particle, an additionalcircular plate having a hole may be installed before or after theelectrostatic lens system 409. Just after the electrostatic lens system409, 7 cm downstream in this example, a movable stage 411 is provided. Asubstrate 410 having a via hole forming part is fixed on the movablestage. The movable stage 409 is movable in a horizontal direction. TheNi particles can be deposited on the bottom part of the via hole formingpart provided at the entire surface of the substrate by scanning thesubstrate 410. The movable stage 411 can also be moved in a verticaldirection and therefore the distance between the electrostatic lenssystem 409 and substrate 410 can be adjusted. It is effective to lowerthe temperature of the substrate to 0° C., for example, in order to easethe recoil at the bottom part of the via hole forming part of the highspeed particles. For this reason, a temperature adjustment mechanism maybe provided at the movable stage 111.

Next, a process for forming carbon nanotubes by using the Ni particlesas catalysts is explained.

FIG. 9 is a flowchart showing a process for forming carbon nanotubes ofthe first example of the first embodiment of the present invention. FIG.10 is a schematic cross-sectional view showing a state of the firstexample of the first embodiment where the carbon nanotubes are formed ina via hole of a substrate.

As shown in FIG. 10-(a), a resist pattern 512 is formed on a substrate410 (or a structural body formed on the substrate 410). Next, a patternis formed by photo lithography and followed by dry etching on thesubstrate 410 by using a resist pattern 512 as a mask so that a via holeforming part 513 is formed. (Step 1)

Next, as shown in FIG. 10-(b), the particle beam having high directivityis irradiated to the substrate 410 by using a particle depositionapparatus having a structure shown in FIG. 7. At this time, the Niparticles 514 are deposited on the resist pattern 112. The Ni particles514 are also deposited substantially only on bottom part 513 a of thevia forming part 513. (Step 2)

Next, as shown in FIG. 10-(c), after the resist pattern 512 is removedby an asking process or the like, an annealing process as a processprior to CVD is performed at approximately 600° C. in an H₂ environmenthaving a pressure of approximately 10³ Pa. (Step 3)

Next, carbon nanotubes 515 are formed with the CVD method by using theNi particles 514 deposited on the bottom part 513 a of the via holeforming part 513 as a catalyst. (Step 4) In this case, as shown in FIG.10-(d), the carbon nanotubes 515 are grown substantially perpendicularlyfrom the Ni particles 514 so as to fill in the via hole forming part513. As a result of this, as shown in FIG. 10-(e), a plug 516 made ofcarbon nanotubes is formed.

According to the above described first example, particles can bedeposited on substantially only a bottom part of a groove structurehaving a high aspect ratio, for example, only a bottom part of a viahole of a semiconductor wire, as well as a plane part. Because of this,the carbon nanotubes can be grown in the groove structure with precisecontrollability by using the deposited particles as catalysts.

Second Example of First Embodiment

Next, a second example of the first embodiment is explained. FIG. 11 isa schematic view showing a fine particle beam irradiation part of aparticle deposition apparatus of the second example of the firstembodiment.

In this example, the Ni particles are converged at the vacuum room 408keeping a pressure of 10² Pa, for example, by using an aerodynamic lens421. The aerodynamic lens 421 includes a plurality of circular plates421 a having holes. The circular plates 421 a forming a lens areprovided in a flow of gas. The particle beam is converged by usinginertia of the particles when the flow repeats contraction andexpansion. The proper diameter of the holes of the circular platesdepends on the particle size, gas flow rate, and a pressure. In order toconverge particles having a diameter of 5 nm under conditions of theabove mentioned amount of flow and pressure, it is necessary to providecircular plates having holes whose diameter is approximately 12 mm. Byarranging circular plates having holes in order from a large diameter tosmall diameter in series from upstream to downstream, it is possible toform a particle beam having a diameter less than 1 mm while usingparticles in a wide size range. In this example, six of the circularplates 421 a having external diameters of 5 cm and holes havingdiameters of 10-20 mm are provided at distances of 10 cm apart so that aparticle beam formed by particles having diameters of 3 nm-20 nm can beconverged.

After being converged, the particle beam is led to the vacuum room 423via the orifice 422 which is provided at the downstream end of theaerodynamic lens 421 and has a diameter of 4 mm. A pressure ofapproximately 10 Pa is kept in the vacuum room 423, and a pump fordifferential pumping is connected to the vacuum room 423. The convergedparticle beam is led to a high vacuum room 425. In the high vacuum room425, a pressure of approximately 10⁻⁴ Pa is kept. At 7 cm downstreamfrom the orifice 422, the movable stage 411 is provided.

Third Example of First Embodiment

In this example, a forming apparatus and a forming method of a carbonnanotube, in a state where a deposition state of particles and a surfacestate of a substrate are controlled, are described.

FIG. 12 is a schematic view showing a schematic structure of a formingapparatus of a carbon nanotube of the third example of the firstembodiment of the present invention. In this example, Ni particles areused as catalyst particles.

In this example, the particles are generated by using a laser ablation.A Ni substrate 600 is provided in a particle generation chamber 601having a pressure of approximately 3×10³ Pa. The Ni substrate 600 is hitby a beam generated from the pulse laser 602 (a second harmonic Nd:YAGlaser having a repeated frequency 20 Hz, and a wavelength of 532 nm) sothat vapor is generated. This vapor is cooled by helium (He) havingapproximately 99.99995% purity and a flow rate of 1 SLPM (standard literper minute) so that Ni particles (nano-particles) are generated bynucleation.

Next, the generated Ni particles are annealed at approximately 800° C.,for example, by a tube-shaped electric furnace 603. And then, the Niparticles are charged by an irradiation source of americium 241 (²⁴¹Am)at a charging apparatus 604 and classified by a DMA (DifferentialMobility Analyzer) 605 so that the sizes of the Ni particles arearranged.

A tube with a carrier gas of 1 liter per minute leads the Ni particlespassing through the DMA 605 to a deposition chamber 606. The depositionchamber 606 may keep the substantially same pressure as an upstreamchamber such as approximately 3×10³ Pa or may be a lower pressure suchas a pressure less than approximately 10² Pa. In this example, thepressure is set as substantially the same pressure as the upstreamchamber.

A movable stage where a substrate is fixed is provided at the depositionchamber 606. It is possible to add a bias voltage to the movable stage.Almost 100% of charged Ni particles adhere to the substrate because ofan electrical field between a nozzle and the charged Ni particles. Theamount of the bias voltage depends on particle size or otherexperimental conditions. In a case where the particles have a sizebetween approximately 1 nm and 10 nm, positively or negatively 100V ofthe bias voltage may be added. The movable stage is provided so as toscan perpendicularly to a particle injection opening so that the Niparticles can be deposited on the substrate uniformly.

The substrate where the Ni particles are deposited is led to a CVDchamber 608 via the transfer chamber 607. Since the transfer chamber 607has a pressure less than 10³ Pa, the introduction of helium gas isstopped first so that an evacuation is performed until the depositionchamber 606 has a pressure substantially the same as the transferchamber 607. After that, the substrate is moved to the transfer chamber607 via the gate valve and then moved to a CVD chamber 608 which isevacuated until the CVD chamber 608 has a pressure substantially thesame as the transfer chamber 607.

After the substrate where the Ni particles are deposited is led to theCVD chamber 608, a flow rate of 100 sccm of argon acetylene mixture gas(50:50), for example, is led into the CVD chamber 608 and carbonnanotubes are grown. In this case, the substrate temperature is atapproximately 700° C. and the pressure is set to approximately 10³ Pa.

The forming apparatus of carbon nanotubes of this example furtherincludes a spattering chamber, a prior process chamber, and a load lock.These can be used to control the surface state or the material of asubstrate or the like.

The carbon nanotubes are grown under a clean condition where adeposition condition of the particles and a surface condition of thesubstrate are controlled, so that it is possible to easily control thegrowth of the carbon nanotubes and to use the carbon nanotubes forelectrical applications.

The present invention is not limited to the above mentioned examples.For example, the second example can be applied to the first example.That is, the particle deposition apparatus shown in FIG. 7 can beapplied to the deposition chamber 606 of the carbon nanotube formingapparatus shown in FIG. 12. Because of this, in a structure where aseries of steps of generating the particles, depositing the particles onthe substrate, and growing the carbon nanotube is performed continuouslyunder a designated environment cut off from the outside, particles canbe deposited on substantially only a bottom part of a groove structurehaving a high aspect ratio.

According to the above described first embodiment, particles can bedeposited on substantially only a bottom part of a groove structurehaving a high aspect ratio, for example, only a bottom part of a viahole of a semiconductor wire, as well as a plane part. Because of this,the carbon nanotube can be grown in the groove structure with precisecontrollability by using the deposited particles as catalysts.

According to the above described first embodiment, the carbon nanotubeis grown under a clean state where a deposition state of the particlesand a surface state of a substrate are controlled, so that it ispossible to easily control the growth of the carbon nanotube and itselectrical application.

Second Embodiment

FIG. 13 is a cross-sectional view of the main point of a semiconductordevice of a second embodiment of the present invention.

Referring to FIG. 13, a semiconductor device 710 has a multilayerinterconnection structure having a dual damascene structure. Morespecifically, the semiconductor device 710 has a structure wherein anetching stopper layer 712, a first interlayer insulating film 713, anetching stopper layer 714, and a second interlayer insulating film 715are deposited on a lower wiring layer 711 in order. In this structure,an upper wiring layer 718 is formed in the second interlayer insulatingfilm 715. Furthermore, in this structure, a via hole forming part 719 isformed by piercing the first interlayer insulating film 713 and theetching stopper layers 712 and 714, so that the lower wiring layer 711and the upper wiring layer 718 are electrically connected. The via holeforming part 719 includes a fine particle catalyst layer 720 formed on asurface of the lower wiring layer 711 and a plurality of carbonnanotubes 721 extending in a perpendicular direction to and provided onthe fine particle catalyst layer 720. A lower end of the carbon nanotube721 comes in contact with the fine particle catalyst layer 720. An upperend of the carbon nanotube 721 comes in contact with the upper wiringlayer 718 or a barrier metal layer 722 formed at a lower side of theupper wiring layer 718 or a plating seed layer (not shown in FIG. 13).Under the above described structure, the lower wiring layer 711 and theupper wiring layer 718 electrically and directly or indirectly connectto the carbon nanotubes 721.

The carbon nanotube 721 has a cylinder-shaped configuration wherein agraphite sheet, which is called a graphene sheet and formed by asix-membered ring formed by sp² combination of carbon atoms, is wound. Atunnel is formed inside of the carbon nanotube 721 in a longitudinaldirection. The diameter of the tunnel is the internal diameter of thecarbon nanotube 721. The external diameter of the carbon nanotube 721 isdetermined by the internal diameter of the carbon nanotube 721 and thenumber of layers.

The carbon nanotube 721 used for the semiconductor device in thisembodiment is made by a CVD method such as a thermal CVD method or aplasma CVD method. In the CVD method, the carbon nanotube 721 is grownby using a transition metal forming the fine particle catalyst layer 720formed on the lower wiring layer 711 or alloy including the transitionmetal as a core. Although the fine particle catalyst layer 720 is shownas a layer shape in FIG. 13, as described below, the fine particlecatalyst layer 720 is formed by an aggregate of the fine particles.

FIG. 14 is a plan and a schematic view of a fine particle catalyst layerof the second embodiment of the present invention. Referring to FIG.14-(A), a lot of fine particles 722 made by a transition metal alloy orthe like are provided on a surface of the lower wiring layer 711. Thefine particles 722 form the fine particle catalyst layer 720. The fineparticles 722 have an average particle diameter of 0.4 nm through 20 nm,more preferably 0.4 nm through 5 nm. The carbon nanotube 721 has adiameter whose length is substantially the same as a side of a fineparticle 722, namely 0.4 nm through 20 nm. By setting the averageparticle diameter of the fine particle 722 to the above mentioned range,it is possible to control the diameter of the carbon nanotube 721 grownby using the fine particle 722 as a core.

The width of the fine particle catalyst layer 720 may be formed bydepositing more than two fine particles 722. Because a fine particle 722is formed on a surface of the fine particle catalyst layer 720, thecarbon nanotube 721 can be grown by using the fine particle 722 as acore. In terms of electric conductivity, it is preferable that the fineparticle catalyst layer 720 be thin, and it is most preferable that onlyone fine particle 722 in a width direction be used for the fine particlecatalyst layer 720 as long as the growth of the carbon nanotube 721 isnot disturbed.

Furthermore, referring to FIG. 14-(B), the fine particle catalyst layer720 may be formed in a state where the fine particles 722 are formedseparated from each other on a surface of the lower wiring layer 711. Bymaking a space between the fine particles 722, it is possible to avoid agrowth in a layer width direction of a carbon nanotube 721 beingdisturbed due to contact with neighboring carbon nanotubes 721. Inaddition, it is possible to form carbon nanotubes 721 having thesubstantially same external diameters with a good filling ratio. Thespaces between the fine particles 722 are properly selected based on alayer width of the carbon nanotubes 21 to be formed. For example, thespace is set as greater than 0.335 nm and more. Furthermore, a layerwidth of the carbon nanotube 21 is controlled by the density of amaterial gas used for the CVD method, the amount of flow, the growthtime, and the like.

A transition metal such as Co, Ni, Fe, or Mo, or an intermetalliccompound including two or more kinds of the above mentioned transitionmetals and P or N, for example, form the fine particle catalyst layer720. In a case where the catalyst layer is a continuous film (solidfilm), although the carbon nanotubes 721 are grown, the diameters of thecarbon nanotubes 721 vary. In this embodiment, since the fine particlecatalyst layer 720 is formed by fine particles whose particle diametersare controlled, it is possible for a bundle of the carbon nanotubes 721to have the substantially same diameter.

A lower end of the carbon nanotube 721 may directly make contact withthe lower wiring layer 711. It is possible to reduce contact resistancein this case more than a case of contact via the fine particle catalystlayer 720. For example, as shown in FIG. 14-(B), such situation can beachieved by forming fine particles which are separated from each other.

Next, a manufacturing method and a structure of the semiconductor deviceof this embodiment are discussed.

FIG. 15 is a first view of a manufacturing process of the semiconductordevice of the second embodiment of the present invention. FIG. 16 is asecond view of the manufacturing process of the semiconductor device ofthe second embodiment of the present invention. In a process shown inFIG. 15-(A), the lower wiring layer 711 formed by Al, Cu, or the like isformed on a surface of a substrate, the interlayer insulating film, orthe like (not shown in FIG. 15), by a spattering method, a depositionmethod, a plating method, or the like. The lower wiring layer 711 may beprovided in a wiring groove of the interlayer insulating film.

In the process shown in FIG. 15-(A), furthermore, the etching stopperlayer 712 having a width of 100 nm and made of a silicon nitride film isformed on the lower wiring layer 711 by the spattering method or thelike.

In the process shown in FIG. 15-(A), furthermore, the first interlayerinsulating film 713 having a width of 1000 nm, for example, is formed onthe etching stopper layer 712. An inorganic insulating film such as asilicon oxide film, SiOF film, BSG film or an organic insulating filmsuch as MSQ (Methylsilsesquioxane) group porous film, a polyimide film,or a parylene film, may be used for the first interlayer insulating film713. The material for the first interlayer insulating film 713 is notlimited to these materials. A via hole forming part 713-1 shown in FIG.15-(B) which is formed in the first interlayer insulating film 713 isfilled with the carbon nanotubes 721. Hence, even if a porous film isused for the first interlayer insulating film 713, it is not necessaryto provide a barrier film for preventing mutual nucleic acid at aboundary with the porous film on a side wall of the via hole formingpart 713-1. Therefore, it is possible to easily use an organicinsulating film or an inorganic insulating film having a low dielectricconstant.

In the process shown in FIG. 15-(A), furthermore, the etching stopperlayer 714 is formed on the first interlayer insulating film 713 by aprocess similar to a process for the etching stopper layer 712.Furthermore, the second interlayer insulating film 715 is formed by amaterial similar to a material for the first interlayer insulating film713.

Next, in a process shown in FIG. 15-(B), by a resist method or RIE(Reactive Ion Etching) method, the second interlayer insulating film715, the etching stopper layer 714, the first interlayer insulating film713, and the etching stopper layer 713 are cut so as to expose the lowerwiring layer 711. This forms a wiring groove 715-1 in the secondinterlayer insulating film 715, and the via hole forming part 713-1 inthe first interlayer insulating film 713.

Next, in a process shown in FIG. 15-(C), the fine particle catalystlayer 720 is formed on a surface 711-1 of the lower wiring layer 711 atthe bottom of the via hole forming part 713-1, by an electroless platingmethod. More specifically, as an example, the fine particle catalystlayer 720 made of CoWP is formed by using a plating bath wherein theplating bath temperature is approximately 90° C. and the time forplating is one second through 15 seconds, under the followingconditions.

Plating bath (pH=10)

CoSO₄.7H₂O=14 g/L Na₂WO₄.2H₂O=48 g/L Na₂C₆H₅O₇.2H₂O=88 g/L (NH₄)₂SO₄=66g/L NaH₂PO₂.H₂O=21 g/L

The average diameter of the fine particles can be controlled bycontrolling the time for plating, for example. As described above, theaverage particle diameter is set to have a length of 0.4 nm through 20nm, more preferably 0.4 nm through 5 nm. The fine particles aregenerated and adhered on the surface 711-1 of the lower wiring layer 711so that the fine particle catalyst layer 720 is formed substantiallyevenly. An inventor of this patent application realized that the fineparticles do not adhere to the side wall 713-1A of the via hole formingpart 713-1, the bottom part 715-1A of the wiring groove 715-1, or theside wall 715-1B of the wiring groove 715-1, or grow in a case where thefine particle catalyst layer 720 is formed by an electroless platingprocess. This may be because an electron of a reducer is supplied toonly the vicinity of the surface 711-1 of the lower wiring layer 711 dueto a difference of the distribution of an electro kinetic potential(zeta electric potential) of the first interlayer insulating film 713,the second interlayer insulating film 715, etching stopper layers 712and 714, and the lower wiring layer 711, and therefore the fineparticles are generated and adhere to only the surface 711-1 of thelower wiring layer 711.

Next, in a process shown in FIG. 16-(A), the carbon nanotubes 721 areformed by a method such as the thermal CVD method or the plasma CVDmethod. More specifically, by using the thermal CVD method, carbonhydride type gas such as acetylene or methane is used as material gasand hydride gas is used as carrier gas and the heating temperature isset as 400° C. through 900° C., more preferably 400° C. through 600° C.and pressure is set as 1 kPa. In addition, an electrical field E isadded to a substrate where the semiconductor device is formed, in alayer width direction, by a bias of −400V. Under the above describedconditions, the carbon nanotubes 721 grow from the fine particlecatalyst layer 720 in the layer width direction so as to fill the viahole forming part 713-1. The lengths of the carbon nanotubes 721 areslightly longer than the depth of the via hole forming part 713-1. Thus,it is possible to achieve good electrical contact with the barrier metalfilm 722 or the upper wiring layer 718 (See FIG. 13).

The diameter of the carbon nanotube 721 depends on the size of the fineparticle, as described above. The number of the carbon nanotubes 721 canbe controlled by the amount of carbon contained in the material gas, theflow amount of the material gas, or the like. Furthermore, a materialmade by sublimating floren or alcohol can be used. In a growth mode ofthe carbon nanotube 721, the carbon nanotube 721 may have fine particlesprovided at a head point of the growth point, or at a base point of thegrowth point. It is common for the fine particles to remain at the basepoint in a case of the thermal CVD, and at the head point in the case ofthe plasma CVD.

FIG. 17 is an SEM (Scanning Electron Microscope) picture of a carbonnanotube used for the semiconductor device of the second embodiment.FIG. 18 is a view for explaining the SEM picture shown in FIG. 17.Referring to FIG. 17 and FIG. 18, it is found that a bundle of thecarbon nanotubes 721 grown in a perpendicular (longitudinal) directionare formed closely.

In the radius direction of the carbon nanotubes 721, there may be eithera single layer carbon nanotube or multilayer carbon nanotubes. In thecase of the multilayer carbon nanotubes, it is preferable that theinternal diameter be small and the number of layers be large, so that itis possible to make the electric resistance of the carbon nanotubessmall so that even a narrow opening part can be filled with a lot of thecarbon nanotubes because the external diameter is small despite thelarge number of layers. Because of this, a via resistance can bereduced. For example, it is most preferable that the internal diameterbe set as 0.4 nm through 2 nm and a number of layers be set as twothrough twenty.

Next, in a process shown in FIG. 16-(B), a barrier metal film 722 havinga width of 10 nm, for example, is formed with a material such as TaN orTiN by using a spattering method so as to cover a surface of thestructure body shown in FIG. 16-(A). The barrier metal film 722 preventsa migration of Cu at the upper wiring layer 718 and secures anelectrical connection with the carbon nanotube 721.

Next, in a process shown in FIG. 16-(C), a seed layer (not shown in FIG.16) made of Cu is formed by a spattering method so as to cover a surfaceof the structure body shown in FIG. 16-(B), and a Cu plating film havinga width of 1500 nm is formed by an electrical plating method.

In the process shown in FIG. 16-(C), furthermore, the above mentioned Cuplating film is made flat with a CMP method by using the barrier metalfilm 722 or the second interlayer insulating film 715 as a polishingstopper. The upper wiring layer 718 may directly connect to the carbonnanotubes 721. As a result of this, the semiconductor device wherein theupper wiring layer 718 and the lower wiring layer 711 are electricallyconnected by the carbon nanotubes 721 can be formed.

According to this embodiment, the fine particle catalysts 720 forgrowing the carbon nanotubes 721 can be formed on only the surface 711-1of the lower wiring layer 711, namely a bottom part of a via holeforming part having a high aspect ratio by an electroless method, andits film width is uniform. Therefore, it is possible to grow the carbonnanotubes 721 which are uniform and whose compression is small from thefine particle catalyst 720, and thereby it is possible to achieve goodelectrical connection with the lower wiring layer 711. Furthermore,since fine particles having uniform sizes are formed, the carbonnanotubes 721 having substantially the same internal and externaldiameters, namely uniform electric properties, can be formed.

Although the dual damascene structure is used as an example in thisembodiment, a single damascene structure can be used. Furthermore,instead of the lower wiring layer 711, a diffusion area formed on asemiconductor substrate can be used. In addition, a contact layer madeof a silicide compound such as CoSi, TiSi, TaSi, PtSi, and NiSi, whichforms an ohmic contact, may be provided between the diffusion area andthe fine particle catalyst layer 720. Because of this, it is possible toreduce the contact resistance between the diffusion area and the fineparticle catalyst layer 720.

Third Embodiment

FIG. 19 is a cross-sectional view of the main point of a semiconductordevice of a third embodiment of the present invention. Referring to FIG.19, the semiconductor device 730 of this embodiment is formed by asemiconductor substrate 731 having a low specific resistance, a siliconoxide film 732 formed on the semiconductor substrate 731, two fineparticle catalyst layers 720 formed separated from each other on thesilicon oxide film 732, carbon nanotubes 733 formed between the fineparticle catalyst layers 720, a source electrode 734A and drainelectrode 734B formed on corresponding fine particle catalyst layers720, a gate electrode 735 formed at a side opposite to a siliconinsulating layer 732 of the semiconductor substrate 731, and others. Thesemiconductor device 730 is a so-called back gate type semiconductordevice. Corresponding to a voltage added to the gate electrode 735, anelectrical field is added to the carbon nanotubes so that the carbonnanotubes function as a channel of a transistor and an electricalcurrent between the source electrode 734A and a drain electrode 734B ischanged. Since the fine particle catalyst layer 720 is provided at thesemiconductor device 730 in this embodiment, the semiconductor device730 has carbon nanotubes which have good controllability of measurement.By using carbon nanotubes having substantially the same dimensions,particularly internal diameter and external diameter, for thetransistor, non-evenness of properties between the transistors arereduced so that the semiconductor device 730 having high reliability canbe obtained.

Next, a manufacturing method and a structure of the semiconductor device30 of this embodiment are described. FIG. 20 is a first view of amanufacturing process of the semiconductor device of the thirdembodiment of the present invention.

In a process shown in FIG. 20-(A), a silicon substrate having a width of500 μm is used as the semiconductor substrate 731. Donor or acceptorimpurity ions are introduced in the semiconductor substrate 731 and thesemiconductor substrate 731 has a low specific resistance. On a surfaceof the semiconductor substrate 731, a silicon oxide film 732 having awidth of 1 nm through 100 nm is formed by thermal oxidation. The siliconoxide film 732 may be formed by the CVD method, the spattering method,or the like.

In the process shown in FIG. 20-(A), the gate electrode 735 made of aconductive material such as Al is formed at a side opposite to thesilicon oxide film 732 of the semiconductor substrate 731 via the Cosilicide film, for example.

Furthermore, in the process shown in FIG. 20-(A), a resist film having apattern opening is formed on the silicon insulating film by aphotography method. Since the source electrode 734A and the drainelectrode 734B are formed in the openings of the resist film, the resistopenings are formed having a gap whose length is 50 nm through 100 μm,for example.

In the process shown in FIG. 20-(A), furthermore, the fine particlecatalyst layer 720 is formed on a surface of the silicon oxide film 732at the opening parts by an electroless plating method. The fine particlecatalyst layer 720 is formed by a method substantially the same as shownin FIG. 15-(C). Although in the process fine particles forming the fineparticle catalyst layer 720 may be adhere to a surface of the resistfilm, there is no problem because the resist film is removed prior toforming the carbon nanotubes.

Next, in a process shown in FIG. 20-(B), after the resist film isremoved, the carbon nanotube 733 is formed by the thermal CVD method,the plasma CVD method, or the like. Although the carbon nanotube 733 isformed by a method substantially the same as shown in FIG. 16-(A), theelectrical field is added to the substrate in parallel in this process.The carbon nanotube grows from the fine particle catalyst layer so thattwo fine particle catalyst layers are connected by a single carbonnanotube. Conditions for growing the carbon nanotube are the same as theprocess shown in FIG. 16-(A). Thus, in a case where the carbon nanotubegrows as bridging between the fine particle metals, normally a singlecarbon nanotube grows.

Next, in a process shown in FIG. 20-(C), a resist film 738 having apattern opening is formed on the silicon oxide film 732 where the carbonnanotube 721 is formed by a photography method. The opening part of theresist film 738 is formed so as to include the fine particle catalystlayer 720. The carbon nanotube 733 comes in contact with the siliconoxide film 732 because of Van der Waals force and others.

In the process shown in FIG. 20-(C), furthermore, the source electrode734A is made of a conductive material such as Au and Pt and the drainelectrode 734B is formed via a Ti film so as to cover the fine particlecatalyst layer 720 by spattering.

Next, in a process shown in FIG. 21, the resist film 738 is lifted offso that the semiconductor device 730 is formed.

According to this embodiment, it is possible to form carbon nanotubeswhose diameters are substantially the same by controlling the size ofthe fine particles of the fine particle catalyst layer 720. Therefore,it is possible to reduce unevenness of the semiconductor devices 730. Inaddition, it is possible to accomplish making the size of the carbonnanotubes small and to realize a high speed working with the ballisticelectron transportation of the electrons. Hence, it is possible torealize a semiconductor device having high reliability.

The present invention is not limited to these embodiments, butvariations and modifications may be made without departing from thescope of the present invention.

What is claimed is:
 1. A manufacturing method of a semiconductor device,the semiconductor device including a first conductive part and a secondconductive part which are provided separated form each other, the methodcomprising the steps of: forming a catalyst layer, which is formed byfine particles, on at least one of the first conductive part and thesecond conductive part; forming a carbon nanotube which electricallyconnects the first conductive part and the second conductive part byusing one of the fine particles as a catalyst.
 2. The manufacturingmethod of the semiconductor device as claimed in claim 1, wherein in thestep of forming the catalyst layer, the catalyst layer is formed by anelectroless plating process.
 3. The manufacturing method of thesemiconductor device as claimed in claim 1, wherein the fine particlesare an initial growth core formed by an electroless plating process. 4.A manufacturing method of a semiconductor device, the semiconductordevice including a first conductive part; an interlayer insulating layerwhich covers the first conductive part; a second conductive part whichis formed on the interlayer insulating layer; and a groove part whichpierces the inter layer insulating layer and exposes the firstconductive layer; wherein the groove part includes a catalyst layer anda carbon nanotube, the catalyst layer is formed on a surface of thefirst conductive part, and the carbon nanotube is formed on the catalystlayer and electrically connects the first conductive layer and thesecond conductive layer; the manufacturing method comprising the stepsof: forming a groove which exposes the first conductive part byselectively etching the interlayer insulating layer; forming thecatalyst layer which is formed by fine particles on a surface of thefirst conductive part in the groove part; and forming the carbonnanotube by using one of the fine particles as a catalyst.
 5. Amanufacturing method of a semiconductor device, the semiconductor deviceincluding a substrate; an insulating layer formed on a main surface ofthe substrate; a first conductive part and a second conductive partformed on the insulating layer isolated from each other; a carbonnanotube formed between the first conductive part and the secondconductive part; and a third conductive part formed on a back surface ofthe substrate; wherein an electric current flowing in the carbonnanotube is controlled by an electric voltage and an electric currentapplied to the third conductive part; the manufacturing methodcomprising the steps of: forming two catalyst layers, each of which isformed by the fine particles, on a surface of the insulating layerseparated from each other; forming the carbon nanotube by using one ofthe fine particles as a catalyst, and forming the first conductive partand the second conductive part which respectively cover the two catalystlayers.